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P-Series Silicon Photo Transistors

 

P-Series Silicon Photo Transistors

 

P-Series Silicon Photo Transistors

 

Features

 

1.Surface mount type
2.Capable 3-way soldering such as front,rear,side plain
3.Microminiaturized photo diode and simple form
4.Easy positioning using with the 2.6×3.2 rectangular hole
5.High sensitivity and high output power photo transistor

6.Model PPT−2068 cut visible light

 

Special order items. Please contact us in details.

 
 
 
Model PPT−1068/PPT−2068 Photo Transistors
 
Absolute Maximum Ratings (Ta=25oC)
Characteristic Symbol Rating Unit
Collector to emitter voltage Vceo 20 V
Emitter to collector voltage Veco 5 V
Collector current Ic - mA
Collector power dissipation Pc 30 mW
Operating temp. Tope -20〜+60 oC
Storage temp. Tstg -30〜+80 oC
 
 
Electronic Characteristics (Ta=25oC)
Characteristic Symbol Conditions Rating Unit
-. PPT-1068. PPT-2068. -
Min. Typ. Typ. Max.
Photo current Ic Vce=5V E=100Lux(Note) 100 200 150 μA
Dark current Iceo IVce=10V E=0Lux - 10 nA
Collector saturation voltage Vce(sat) Ic=1mA E=100Lux(Note) - 0.3 0.3 V
Peak sensitivity wavelength λp - 800 850 nm
Active area A - 0.27 0.27 mm2
Response Rise time tr E=100Lux(Note) 14 16 μs
Fall time tf RL=100Ω 18 18 μs

Note:Light source color temperature 2856°K


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