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P-Series Photo Diode & PIN Photo Diode

 

P-Series Photo Diode & PIN Photo Diode

 

Features

 

1.Surface mount type
2.Capable 3-way soldering such as front,rear,side plain
3.Microminiaturized photo diode and simple form
4.Easy positioning using with the 2.6×3.2 rectangular hole
5.High sensitivity photo diode
6.Excellent low dark current photo diode


Special order items. Please contact us in details.

 
 
 
Model PPD−108 Photo Diode
 
 
Absolute Maximum Ratings (Ta=25oC)
Characteristic Symbol Rating Unit
DC reverse voltage Vr 20 V
Operating temp. Tope -20〜+60 oC
Storage temp. Tstg -30〜+80 oC
 
Electronic Characteristics (Ta=25oC)
Characteristic Symbol Conditions Rating Unit
Min. Typ. Max.
Dark current Id VR=1V E=0Lux RH<=65% - - 10 pA
Dark current temp.coefficient aT VR=1V E=0Lux RH<=65% - 4 5 times/10oC
Shortcircuit current  Isc E=100Lux(Note) 210 260 310 nA 
Shortcircuit current temp.coefficient  βT E=100Lux(Note) - 0.2 0.3 %/oC
Terminal capacitance Ct VR=0V f=1MHz L=0Lux - 40 - pF
Peak sensitivity wavelength λp - - 880 - nm

Note:Light source color temperature 2856°K

 
 
Model PPI−108 PIN Photo Diode
 
Absolute Maximum Ratings (Ta=25oC)
Characteristic Symbol Rating Unit
DC reverse voltage Vr 20 V
Allowable power dissipation Pd 30 mW
Operating temp. Tope -20〜+60 oC
Storage temp. Tstg -30〜+80 oC
 
Electronic Characteristics (Ta=25oC)
Characteristic Symbol Conditions Rating Unit
Min. Typ. Max.
Dark current Id VR=1V E=0Lux RH<=65% - - 10 pA
Shortcircuit current  Isc E=100Lux(Note) 100 150 200 nA 
Open circuit voltage  Vop E=100Lux(Note) - 0.3 - V
Terminal capacitance Ct VR=0V f=1MHz L=0Lux - 15 - pF
Peak sensitivity wavelength λp - - 880 - nm
Response Rise time tr E=100Lux(Note) λ=940nm - 200 - ns
Fall time tf VR=10V  RL=1kΩ - 150 - ns

Note:Light source color temperature 2856°K

 

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